集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
25V |
集电极连续输出电流IC
Collector Current(IC) |
1A |
截止频率fT
Transtion Frequency(fT) |
130MHz |
直流电流增益hFE
DC Current Gain(hFE) |
135~270 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
210mV/0.21V |
耗散功率Pc
Power Dissipation |
2W |
| Description & Applications |
NPN Silicon epitaxial transistor power Mini Mold low collector saturation voltage ：Vce<0.4v excellent DC current gain linearity ：hFE =140 complement to PNP type 2SB798 |
| 描述与应用 |
NPN硅外延晶体管电源小型模具 低集电极饱和电压VCE<0.4V 优良的直流电流增益线性度：HFE= 140 补充PNP型2SB798 |