Please log in first
Home
Cart0
Inventory:900 Min Order:10
Parameters
Related model

×

Parameters:

  • Model:2SK1112
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:K1112
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current500mA/0.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.12Ω/Ohm @2.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2V
耗散功率Pd Power Dissipation20W
Description & ApplicationsFeatures Field Effect transistor Silicon N Channel MOS Type High speed,High Current DC-DC Converter Relay Drive and Motor Drive Applications
描述与应用特性 场效应晶体管 硅N沟道MOS型 高速,高电流DC-DC转换器 继电器驱动器和电机驱动应用

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
2SK1112
*Title:
Message:
*Code: