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  • Model：2SK1646
  • Manufacturer：HUABAN
  • Date Code：05+ 05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：IW5
  • Package：SOT-143/CP4

最大源漏极电压Vds
Drain-Source Voltage		6V
栅源极击穿电压V(BR)GS
Gate-Source Voltage		-5V
漏极电流(Vgs=0V)IDSS
Drain Current		45mA-60mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage		-0.5V -- -5V
耗散功率Pd
Power Dissipation		200mW/0.2W
Description & ApplicationsN-Channel GaAs MESFET. For C to X-band Local Oscillator and Amplifier. Features .Ideal for use in C to X-band local oscillator and amplifier. .The chip surface is covered with the highly reliable protection film. .Super miniaturized plastic-mold package (CP4). .Automatic surface mounting is available
描述与应用砷化镓N沟道MES场效应管 ,用于C X-波段本地振荡器和放大器, 非常适于用于C X波段的本地振荡器和放大器 ,该芯片的表面覆盖有高度可靠的保护膜 ,超小型塑料模具封装（CP4）, 自动表面安装.

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1646
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