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  • Model:2SK1824
  • Manufacturer:HUABAN
  • Date Code:05+ 08NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:B1
  • Package:SOT-523/SC-75

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage7V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance5Ω/Ohm @10mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-1.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-saving systems, such as VCR cameras and headphone stereo systems. Moreover, the 2SK1824 is housed in a super small mini-mold package so that it can help increase the mounting density on the printed circuit board and lower the mounting cost, contributing to miniaturization of the application systems. Features Silicon N-Channel MOS FET Small mounting area: about 60 % of the conventional mini-mold package (SC-70) Can be automatically mounted Can be directly driven by 3-V IC
描述与应用MOS场效应晶体管 N沟道MOS FET的切换 2SK1824是一个N沟道垂直型MOS FET,是 驱动2.5 V。 由于此MOS FET可驱动一个低电压和 因为它不是需要考虑的驱动电流, 2SK1824驱动的执行器节电系统的理想选择, 如VCR摄像头和耳机立体声系统。 此外,2SK1824被安置在一个超小型迷你模具 包,所以,它可以帮助提高安装密度 印刷电路板和降低安装成本,有助于 应用系统的小型化。 特性 硅N沟道MOS FET 小安装面积:约60%的传统的小型模具 封装(SC-70) 可以自动安装 3-V IC可直接驱动

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2SK1824
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