| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 7V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 5Ω/Ohm @10mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-saving systems, such as VCR cameras and headphone stereo systems. Moreover, the 2SK1824 is housed in a super small mini-mold package so that it can help increase the mounting density on the printed circuit board and lower the mounting cost, contributing to miniaturization of the application systems. Features Silicon N-Channel MOS FET Small mounting area: about 60 % of the conventional mini-mold package (SC-70) Can be automatically mounted Can be directly driven by 3-V IC |
| 描述与应用 | MOS场效应晶体管 N沟道MOS FET的切换 2SK1824是一个N沟道垂直型MOS FET，是 驱动2.5 V。 由于此MOS FET可驱动一个低电压和 因为它不是需要考虑的驱动电流， 2SK1824驱动的执行器节电系统的理想选择， 如VCR摄像头和耳机立体声系统。 此外，2SK1824被安置在一个超小型迷你模具 包，所以，它可以帮助提高安装密度 印刷电路板和降低安装成本，有助于 应用系统的小型化。 特性 硅N沟道MOS FET 小安装面积：约60％的传统的小型模具 封装（SC-70） 可以自动安装 3-V IC可直接驱动 |