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Parameters:

  • Model:2SK1827
  • Manufacturer:HUABAN
  • Date Code:05+ 05+NOPB1K
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:KH
  • Package:SOT-323/SC-70/USM

最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current50mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance20Ω/Ohm @10mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2.5V
耗散功率Pd Power Dissipation100mW/0.1W
Description & ApplicationsTOSHIBA FIELD EFFECT TRANSISTOR SILICON A CHANNEL MOS TYPE HIGH SPEED SWITCHING APPLICATION ANALOG SWITCHING APPLICATION Features Silicon N-Channel MOS FET High speed switching application Analog switching application 4V gate drive Low threshold voltage High speed Enhancement-mode small package
描述与应用东芝场效应晶体管的硅A通道MOS型 高速开关应用 模拟开关应用 特性 硅N沟道MOS FET 高速开关应用 模拟开关应用 4V栅极驱动 低阈值电压 高速 增强型 小包装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1827
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