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Parameters:

  • Model:2SK1848
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:LJ
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage15V
最大漏极电流Id Drain Current400mA/0.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.9Ω/Ohm @200mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation250mW/0.25W
Description & ApplicationsN-CHANNEL MOS SILICON FET Very high speed switching application Features N-Channel MOS silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive
描述与应用N沟道MOS硅场效应管 非常高速开关应用 特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1848
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