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Parameters:

  • Model:2SK18600R2MC
  • Manufacturer:HUABAN
  • Date Code:05+PB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:1H R
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.095~0.48ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-2~-5v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & Applications•Silicon N-Channel Junction FET •For impedance conversion in low frequency For electret capacitor microphone Features • High mutual conductance gm • Low noise voltage of NV
描述与应用•硅N沟道结型场效应管 •对于低频阻抗转换中 对于驻极体电容式麦克风 特点 •高互导GM •低噪声电压的NV

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK18600R2MC
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