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Parameters:

  • Model:2SK1875-V
  • Manufacturer:HUABAN
  • Date Code:05+ROHS 05+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:RBV
  • Package:SOT-323/SC-70/USM

最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current32mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation100mW/0.1W
Description & ApplicationsTOSHIBA FIELD EFFECT TRANSISTOR SILICON A CHANNEL MOS TYPE Features Silicon N-Channel Junction FET HIGH FREQUENCY AMPLIFIER APPLICATION AM HIGH FREQUENCY AMPLIFIER APPLICATION AUDIO FREQUENCY AMPLIFIER APPLICATION HIGH Yfs LOW Ciss
描述与应用东芝场效应晶体管的硅A通道MOS型 特性 硅N沟道结型场效应管 高频放大器的应用 AM高频放大器的应用 音频放大器应用 高Yfs 低Ciss

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1875-V
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