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  • Model:2SK2111
  • Manufacturer:HUABAN
  • Date Code:05 05+NOPB
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:NU
  • Package:SOT-89/SC-62

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.24Ω/Ohm @500mA.10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2.0V
耗散功率Pd Power Dissipation2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2110 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. Features MOS FIELD EFFECT TRANSISTOR Low ON resistance High switching speed Low parasitic capacitance
描述与应用MOS场效应晶体管 N沟道MOS FET高速开关 2SK2110是一个N沟道MOS FET的垂直型 是一种开关元件,可以直接驱动的输出 IC工作在5 V。 该产品具有低导通电阻和一流的开关 特征,并且是用于驱动致动器的理想选择,如 马达和DC / DC转换器。 特性 MOS场效应晶体管 低导通电阻 高开关速度 低寄生电容

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2111
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