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Parameters:

  • Model:2SK2151
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:KI
  • Package:SOT-89/SC-62/PCP

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage15V
最大漏极电流Id Drain Current1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.35Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation1.3W
Description & ApplicationsFeatures N-Channel MOS silicon FET Very high-speed switching applications Low ON resistance Very high-speed switching Low-voltage drive
描述与应用特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2151
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