Please log in first
Home
Cart0

×

Parameters:

  • Model:2SK2503TL
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:K2503
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.11Ω/Ohm @2.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.5V
耗散功率Pd Power Dissipation20W
Description & Applications4V Drive Nch MOS FET Silicon N-channel MOS FET Features Silicon N-channel MOS FET Low On-resistance Fast switching speed Wide SOA (safe operating area) 4V drive Drive circuits can be simple Parallel use is easy
描述与应用4V驱动N沟道MOS FET 硅N沟道MOS FET 特性 硅N沟道MOS FET 低导通电阻 开关速度快 宽SOA(安全工作区) 4V驱动 驱动电路可以很简单 并行使用容易

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
2SK2503TL
*Title:
Message:
*Code: