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Parameters:

  • Model:2SK3074
  • Manufacturer:HUABAN
  • Date Code:05+NOPB
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:WA
  • Package:SOT-89/PW-Mini

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage25V
最大漏极电流Id Drain Current1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage1.4-2.4V
耗散功率Pd Power Dissipation3W
Description & ApplicationsTOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Features RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
描述与应用东芝场效应晶体管的硅N沟道MOS型 RF功率MOSFET VHF和UHF频带功率放大器 特性 RF功率MOSFET VHF和UHF频带功率放大器

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK3074
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