集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 80mA |
截止频率fT
Transtion Frequency(fT) | 6GHz~8GHz |
直流电流增益hFE
DC Current Gain(hFE) | 70~140 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 600mW/0.6W |
| Description & Applications | NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description |
| 描述与应用 | NPN硅RF晶体管* •低噪声，高增益放大器高达2 GHz •对于线性宽带放大器 •英尺= 8 GHz时，F = 1分贝在900 MHz •无铅（符合RoHS）包1） •符合AEC Q101 *短期描述 |