集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −15V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 25 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | |
耗散功率Pc
PoWer Dissipation | 1W |
| Description & Applications | PNP 5 GHz wideband transistor FEATURES • High output voltage capability • High gain bandwidth product • Good thermal stability • Gold metallization ensures excellent reliability |
| 描述与应用 | PNP5 GHz的宽带晶体管 特点 •高输出电压能力 •高增益带宽积 •良好的热稳定性 •黄金金属确保卓越的可靠性 |