集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 300mA/0.3A |
截止频率fT
Transtion Frequency(fT) | 4Ghz~5.5Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 2W |
| Description & Applications | NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz |
| 描述与应用 | NPN硅RF晶体管 •对于低-失真的的的宽带输出放大器中 天线和电信中的阶段 高达在集电极电流从至2 GHz的系统中 120毫安到250mA •DECT和PCN系统上的的电源放大器，适用于 •集成的发射极镇流电阻器 •FT =5.5 GHz的 |