集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 12V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 4.5V |
集电极连续输出电流IC
Collector Current(IC) | 35mA |
截止频率fT
Transtion Frequency(fT) | 25GHz |
直流电流增益hFE
DC Current Gain(hFE) | 60~130 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 160mW/0.16W |
| Description & Applications | NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms= 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET 25 GHz fT - Line • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 |
| 描述与应用 | NPN硅RF晶体管 •对于高增益低噪声放大器 •对于振荡器高达10 GHz •噪声系数F =1.1dB在1.8 GHz 杰出GMS=21dB在1.8 GHz •过渡频率fT=25 GHz的 •高可靠性的黄金金属 •SIEGET 25 GHz的FT - 线 •无铅（符合RoHS）包1） •符合AEC Q101 |