集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 6Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 65~150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Wide band amplifier up to GHz range. |
| 描述与应用 | 硅NPN平面RF晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •无铅（Pb）组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 宽频带放大器高达GHz范围内。 |