集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 25mA |
截止频率fT
Transtion Frequency(fT) | 450MHz |
直流电流增益hFE
DC Current Gain(hFE) | 85 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN medium frequency transistor FEATURES • IC(max) = 25 mA • VCEO(max) = 20 V • Very low feedback capacitance (typ. 350 fF). APPLICATIONS • IF and VHF thick and thin-film circuit applications. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. |
| 描述与应用 | NPN中频晶体管 特点 •IC（最大值）= 25 mA的 •VCEO（最大值）= 20 V •非常低的反馈电容. 应用 •中频和VHF厚和薄膜电路的应用。 说明 NPN中频晶体管在SOT23塑料包装。 |