| Collector-Base Voltage(VCBO) Q1/Q2 |
-50V/-50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 |
-50V/-50V |
| Collector Current(IC) Q1/Q2 |
-100mA/-100MA |
| Q1 Input Resistance(R1) |
2.2KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio |
0.047 |
| Q2 Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2 (R1/R2) Q2 Resistance Ratio |
0.047 |
| hFE DC Current Gain(hFE) |
|
| Transtion Frequency(fT) Q1/Q2 |
250MHz/250MHZ |
| Power Dissipation Q1/Q2 |
150mW/0.15W |
| Description & Applications |
Features •Emitter common (dual digital transistors) •Two DTA123Js chips in a EMT or UMT or SMT package.. |
| 描述与应用 |
特点 •发射极普通的（双数字晶体管） •的两个DTA123Js芯片在EMT或UMT或SMT封装. |