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Parameters:

  • Model:FDC6301N
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:301
  • Package:SOT-163/SOT23-6/SSOT-6

最大源漏极电压Vds
Drain-Source Voltage
25V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
220mA/0.22A
源漏极导通电阻Rds
Drain-Source On-State Resistance
4Ω@ VGS = 4.5V, ID = 0.4A
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.65~1.5V
耗散功率Pd
Power Dissipation
900mW/0.9W
Description & ApplicationsDual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors. Features Very low level gate drive requirements allowing direct operation in 3V circuits
描述与应用双N沟道,数字FET 概述 这些双N沟道逻辑电平增强模式场效应晶体管都采用飞兆半导体专有的,高细胞密度,DMOS技术。这非常高密度的过程特别是针对减少已经设计的状态resistance.This设备的,尤其是低电压应用程序替换为数字晶体管。由于偏置电阻器不是必需的,这些N沟道FET的可以取代 一些数字晶体管,偏置电阻器的各种。 特点 非常低的水平栅极驱动要求可直接操作3V电路

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FDC6301N
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