| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 5.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.012Ω/Ohm @1.4A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 5.7W |
| Description & Applications | 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V • Low gate charge (18 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) |
| 描述与应用 | 30V N-沟道PowerTrench MOSFET 概述 此N沟道MOSFET已专门设计以提高整体效率的DC / DC 转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷，低RDS（ON）和快速开关速度。 •54 A，30 V的RDS（ON）=12MΩ@ VGS= 10 V RDS（ON）= 14.5MΩ@ VGS= 4.5 V •低栅极电荷（18 nC典型） •快速开关 •高性能沟道技术极 低RDS（ON） |