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Parameters:

  • Model:FDD6692
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:FDD6692
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage16V
最大漏极电流Id Drain Current5.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.012Ω/Ohm @1.4A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-3V
耗散功率Pd Power Dissipation5.7W
Description & Applications30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V • Low gate charge (18 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON)
描述与应用30V N-沟道PowerTrench MOSFET 概述 此N沟道MOSFET已专门设计以提高整体效率的DC / DC 转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷,低RDS(ON)和快速开关速度。 •54 A,30 V的RDS(ON)=12MΩ@ VGS= 10 V RDS(ON)= 14.5MΩ@ VGS= 4.5 V •低栅极电荷(18 nC典型) •快速开关 •高性能沟道技术极 低RDS(ON)

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FDD6692
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