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Parameters:

  • Model:FDD8878
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:FDD8878
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.015Ω/Ohm @3.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.25V
耗散功率Pd Power Dissipation40W
Description & ApplicationsN-Channel PowerTrench ®MOSFET 30V, 40A, 15mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. DS(ON)= 15mΩ, VGS = 10V, ID = 35A DS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low DS(ON) Low gate charge High power and current handling capability
描述与应用N-沟道PowerTrench®MOSFET30V,40A,15MΩ 概述 这N沟道MOSFET已专门设计 提高整体效率的DC / DC转换器 同步或传统开关PWM 控制器。它已被优化的低门电荷,低 RDS(ON)和快速开关速度。 DS(ON)=15MΩ,VGS= 10V,ID= 35A DS(ON)=18.5mΩ,VGS= 4.5V,ID= 35A 高性能沟道技术极低 DS(ON) 低栅极电荷 高功率和电流处理能力

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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FDD8878
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