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  • Model:FDT434P
  • Manufacturer:HUABAN
  • Date Code:04+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:D434AF
  • Package:SOT-223

最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.040Ω @-6A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4--1V
耗散功率Pd
Power Dissipation
3W
Description & Applications• Low gate charge (5nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability.
描述与应用•低栅极电荷(典型5NC)。 •快速开关速度。 •高性能沟道技术极 低RDS(ON) •高功率和电流处理能力

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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FDT434P
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