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Parameters:

  • Model:FZT849TA
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:FZT849
  • Package:SOT-223

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
30V
集电极连续输出电流IC
Collector Current(IC)
7A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
350mV/0.35V
耗散功率Pc
Power Dissipation
3W
Description & ApplicationsSOT223 NPN SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTOR Extremely low equivalent on-resistance 7 Amp continuous collector current (20 Amp peak) Very low saturation voltages Excellent gain charateristics specified upto 20 Amp COMPLEMENTARY TYPE - FZT949
描述与应用SOT223 NPN硅平面高电流(高性能)晶体管 极低的等效导通电阻 7安培连续集电极电流(20安培峰值) 极低的饱和电压 出色的增益高达20安培的特征简介 互补型 - FZT949

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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FZT849TA
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