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Parameters:

  • Model:FZT757TA
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:FZT757
  • Package:SOT-223

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-300V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−300V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
30MHz
直流电流增益hFE
DC Current Gain(hFE)
50
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
2W
Description & ApplicationsPNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES Low saturation voltage COMPLEMENTARY TYPE FZT657
描述与应用PNP硅平面高压晶体管 特点 低饱和电压 互补型FZT657

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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FZT757TA
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