最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -20V |
最大漏极电流Id
Drain Current | -4A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 150mΩ@ VGS = -4.5V, ID = -3A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -1V |
耗散功率Pd
Power Dissipation | 2W |
| Description & Applications | Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on)60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. |
| 描述与应用 | 超低导通电阻 P沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷 描述 这些P沟道MOSFET的国际整流器采用先进的加工技术，以实现极低的导通电阻每硅片面积。这样做的好处，为设计师提供了一个非常有效的设备使用电池和负载管理应用。 TSOP-6封装，其定制的引线框架产生的HEXFET®功率MOSFET的RDS（on）比同样大小的SOT-23少60％。这个包是理想的应用印刷电路板空间是一个溢价。它独特的散热设计和RDS（上）减少使电流处理增加了近300％相比，SOT-23。 |