最大源漏极电压Vds
Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 8V |
最大漏极电流Id
Drain Current | 3.3A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 105mΩ@ VGS =2.5V, ID =2.3A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.6~1.2V |
耗散功率Pd
Power Dissipation | 1.13W |
| Description & Applications | Power MOSFET Features • Low RDS(on) and Fast Switching Speed • Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6. Ideal Device for Applications Where Board Space is at a Premium. • ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for Applications Where Heat Transfer is Required. • Pb−Free Packages are Available Applications • DC−DC Buck or Boost Converters • Low Side Switching • Optimized for Battery and Low Side Switching Applications in Computing and Portable Equipment |
| 描述与应用 | 功率MOSFET 特点 •低的RDS（on） 和快速开关速度 •无铅ChipFET包装40％更小的体积比TSOP-6。应用电路板空间是一个溢价的理想设备。 •ChipFET包装具有优良的散热能力。需要传热应用的理想选择。 •无铅包可用 应用 •DC-DC降压或升压转换器 •低边开关 •优化计算和便携设备的电池和低侧开关中的应用 |