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Parameters:

  • Model:NTHS2101PT1g
  • Manufacturer:HUABAN
  • Date Code:07+ROHS 04+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:d4
  • Package:1206-8

最大源漏极电压Vds
Drain-Source Voltage
-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-5.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.019Ω @-5.4A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45--1.5V
耗散功率Pd
Power Dissipation
1.3W
Description & ApplicationsFeatures • Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics • Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics • Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology • Pb−Free Package is Available
描述与应用•薄型(<1.1毫米)允许它能够轻松融入极薄 环境,如便携式电子产品 •专为提供低RDS(ON) 低栅极电压为1.8 V, 用于便携式电子产品在许多逻辑IC的工作电压 •简化电路设计,因为其他的门电路升压 电压不 •工作在标准逻辑电平栅极驱动,有利于未来 迁移到下级使用相同的基本拓扑结构 •无铅包装是可用

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NTHS2101PT1g
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