集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 8Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 360mW/0.36W |
| Description & Applications | • UHF wideband transistor • Small size • Low noise • Low distortion • High gain • Gold metallization ensures excellent reliability. APPLICATIONS • Communication and instrumentation systems. |
| 描述与应用 | •UHF宽带晶体管 •小尺寸 •低噪音 •低失真 •高增益 •黄金金属确保卓越的可靠性。 应用 •通信和仪器仪表系统。 |