集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 420MHz |
直流电流增益hFE
DC Current Gain(hFE) | 150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 25mV~150mV |
耗散功率Pc
Power Dissipation | 250mW/0.25W |
| Description & Applications | 15 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat leads. APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • LCD backlighting • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION • NPN low VCEsat transistor in a SC-89 (SOT490) plastic package |
| 描述与应用 | 15 V低VCEsat NPN晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •改进的热行为由于平坦的线索。 应用 •通用开关和静音 •低频驱动电路 •LCD背光 •音频通用放大器应用 •电池驱动设备（移动电话，视频 相机和手持设备）。 说明 NPN低VCEsat 在SC-89（SOT490）塑料包装晶体管 |