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Parameters:

  • Model:PBSS4240T
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:ZEp
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
40V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
230MHz
直流电流增益hFE
DC Current Gain(hFE)
470
管压降VCE(sat)
Collector-Emitter Saturation Voltage
70mV~320mV
耗散功率Pc
Power Dissipation
480mW/0.48W
Description & Applications40 V, 2A NPN low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package
描述与应用40 V,2A NPN低VCEsat(BISS)晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性,由于减少热 代 •更换SOT89/SOT223标准包装 晶体管。 应用 •供电线路开关电路 •电池管理应用 •DC / DC转换器应用 •闪光灯单元 •重型电池供电设备(电机和灯泡 驱动程序)。 说明 NPN低VCEsat  在SOT23塑料封装晶体管

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PBSS4240T
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