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Parameters:

  • Model:PMBF170
  • Manufacturer:HUABAN
  • Date Code:05+ 05+NOPB4K
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:KX
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current250mA/0.25A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance2.5Ω/Ohm 2.2A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-3.0V
耗散功率Pd Power Dissipation300mW/0.3W
Description & ApplicationsN-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed andbline transformer drivers. FEATURES • Direct interface to C-MOS,TTL,etc. • High-speed switching • No secondary breakdown
描述与应用N沟道增强模式垂直D-MOS晶体管 说明 N沟道增强型垂直D-MOS晶体管在SOT23封装信封。作为一个设计用于使用 表面贴装器件(SMD)的薄和厚的薄膜电路与继电器,高速andbline变压器驱动器的应用 •直接连接到C-MOS,TTL等 •高速开关 •无二次击穿

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PMBF170
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