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Parameters:

  • Model:SI2304DS
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:P2S/P25
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.117Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation830mW/0.83W
Description & ApplicationsN-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 echnology TrenchMOS™ technology Very fast switching Subminiature surface mount package.
描述与应用N沟道增强型场效应晶体管 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™1技 TrenchMOS™技术 开关速度非常快 超小型表面贴装封装

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SI2304DS
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