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Parameters:

  • Model:SI3454DV
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:A4K
  • Package:SOT-163/SOT23-6/TSOP-6

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current4.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance95mΩ@ VGS =4.5V, ID =3.4A
开启电压Vgs(th) Gate-Source Threshold Voltage1V
耗散功率Pd Power Dissipation2W
Description & ApplicationsP-Channel 30-V (D-S) MOSFET
描述与应用P沟道30-V(D-S)的MOSFET

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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SI3454DV
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