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Parameters:

  • Model:SI3456BDV
  • Manufacturer:HUABAN
  • Date Code:05+nopb4500
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:6B
  • Package:SOT-163/SOT23-6/TSOP-6

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current4.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance52mΩ@ VGS =4.5V, ID =4.9A
开启电压Vgs(th) Gate-Source Threshold Voltage1~3V
耗散功率Pd Power Dissipation1.1W
Description & ApplicationsN-Channel 30-V (D-S) MOSFET
描述与应用N沟道30-V(D-S)的MOSFET

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SI3456BDV
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