最大源漏极电压Vds
Drain-Source Voltage | -12V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -8V |
最大漏极电流Id
Drain Current | -5.9A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 41mΩ@ VGS ='-1.8V, ID ='-3A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.4~-1V |
耗散功率Pd
Power Dissipation | 1.1W |
| Description & Applications | P-Channel 12-V (D-S) MOSFET FEATURES • Trench FET Power MOSFET • PWM Optimized APPLICATIONS • Load Switch • PA Switch |
| 描述与应用 | P沟道12-V（D-S）的MOSFET 特点 •沟槽FET功率MOSFET •PWM优化 应用 •负荷开关 •PA开关 |