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Parameters:

  • Model:SI3473DV
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:73
  • Package:SOT-163/SOT23-6/TSOP6

最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-5.9A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
41mΩ@ VGS ='-1.8V, ID ='-3A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4~-1V
耗散功率Pd
Power Dissipation
1.1W
Description & ApplicationsP-Channel 12-V (D-S) MOSFET FEATURES • Trench FET Power MOSFET • PWM Optimized APPLICATIONS • Load Switch • PA Switch
描述与应用P沟道12-V(D-S)的MOSFET 特点  •沟槽FET功率MOSFET  •PWM优化 应用  •负荷开关  •PA开关

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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SI3473DV
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