Home
Cart0

×

Parameters:

  • Model:SSM6L12TU
  • Manufacturer:HUABAN
  • Date Code:11+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:K9
  • Package:SOT-363/SC70-6/UF6

最大源漏极电压Vds
Drain-Source Voltage
30V/-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V/12V
最大漏极电流Id
Drain Current
500mA/-500mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
145mΩ@ VGS = 4.5V, ID = 500mA/ 260mΩ@ VGS = -4V, ID = -250mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.5~1.1V/-0.5~-1.1V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type High-Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)
描述与应用东芝场效应晶体管的硅P/ N沟道MOS类型 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻Q1:RDS(ON)=180mΩ(最大)(@ VGS=2.5 V) Q2:RDS(ON)=430mΩ(最大)(@ VGS=-2.5 V)

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
SSM6L12TU
*Title:
Message:
*Code: