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Parameters:

  • Model:BC858B
  • Manufacturer:HUABAN
  • Date Code:07+3kROHS 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:3K
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−30V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
220~475
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-250mV/-0.25V
耗散功率Pc
PoWer Dissipation
250mW/0.25W
Description & ApplicationsPNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification
描述与应用PNP通用晶体管 特点 •低电流(最大100 mA) •低电压(最大65 V)。 应用 •通用开关和放大。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BC858B
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