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Parameters:

  • Model:HN1A01FE-GR
  • Manufacturer:HUABAN
  • Date Code:10+ROHS
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:D1G
  • Package:SOT-563/ES6

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -150MA/-0.15A
Transtion Frequency(fT)  80MHZ
DC Current Gain(hFE)  120~400

VCE(sat)

Collector-Emitter Saturation Voltage

 -0.3V
Power Dissipation (Pd)  100MW/0.1W
Description & Applications  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 
 
Audio Frequency General Purpose Amplifier Applications 
* Small package (Dual type) 
* High voltage and high current 
: VCEO = −50V, IC = −150mA (max) 
* High hFE: hFE = 120~400 
* Excellent hFE linearity 
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) 
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HN1A01FE-GR
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