最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | 0 |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 226mΩ@ VGS = -10V, ID = -1000mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.8~-2.0V |
耗散功率Pd
Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) |
| 描述与应用 | TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) |