| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
10kΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
0 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
|
| Q2基极输入电阻R1 Input Resistance(R1) |
10kΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
0 |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
|
| 直流电流增益hFE DC Current Gain(hFE) |
120~700 |
| 截止频率fT Transtion Frequency(fT) |
250MHZ |
| 耗散功率Pc Power Dissipation |
100mW/0.1W |
| Description & Applications |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. |
| 描述与应用 |
开关，逆变电路，接口电路和驱动器电路应用 •两个偏置电阻晶体管封装在一个器件里。 •偏置电阻晶体管，减少了部件数量。减少零件数，使制造比以往更紧凑的设备和装配成本。 |