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2N7002K MOSFET N-Channel 60V 340mA/0.34A SOT-23/SC-59 marking W2K Logic level compatible/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 15V |
| 最大漏极电流Id Drain Current | 340mA/0.34A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.8Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | TrenchMOS™ logic level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology Features TrenchMOS™ logic level FET Logic level compatible Very fast switching Subminiature surface mount package Gate-source ESD protection diodes |
| 描述与应用 | renchMOS™逻辑电平FET 描述 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™技术 特性 TrenchMOS™逻辑电平FET 逻辑电平兼容 开关速度非常快 超小型表面贴装封装 栅源ESD保护二极管 |
