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2SA1022 PNP transistors(BJT) -30V -30mA 300MHz 110~220 -100mV/-0.1V SOT-23/SC-59 marking EB RF amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
-30mA
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
70~140
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-100mV/-0.1V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & Applications Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
描述与应用 硅PNP外延刨床类型 对于高频放大 互补2SC2295 特点 高转换频率FT。 迷你型包装,让精简的设备和通过自动插入带包装盒包装
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