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2SA1022 PNP transistors（BJT） -30V -30mA 300MHz 110~220 -100mV/-0.1V SOT-23/SC-59 marking EB RF amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−20V |
| 集电极连续输出电流IC Collector Current(IC) |
-30mA |
| 截止频率fT Transtion Frequency(fT) |
300MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
70~140 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
-100mV/-0.1V |
| 耗散功率Pc PoWer Dissipation |
200mW/0.2W |
| Description & Applications | Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | 硅PNP外延刨床类型 对于高频放大 互补2SC2295 特点 高转换频率FT。 迷你型包装，让精简的设备和通过自动插入带包装盒包装 |
