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2SA1035-S PNP transistors（BJT） -55V -50mA 200MHz 260~520 -700mV/-0.7V SOT-23/SC-59 marking H.S
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -55V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -55V |
| 集电极连续输出电流IC Collector Current(IC) | -50mA |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 260~520 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −700mV/-0.7V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | Silicon PNP epitaxial planer type Features Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | 硅PNP外延刨床类型 特点 低噪声电压NV。 高正向电流传输比HFE。 迷你型包装，让精简的设备和通过自动插入带包装盒包装 |
