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2SA1213-O PNP transistors(BJT) -50V -2A 120MHz 70~140 -500mV/-0.5V SOT-89/SC-62 marking NO power amplifier/switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
70~140
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsSilicon PNP Epitaxial Type Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873
描述与应用硅PNP外延型 功率放大器应用 电源开关应用 •低饱和电压VCE(sat)=-0.5 V(最大值)(IC=-1 A) •高速开关时间:TSTG=1.0微秒(典型值) •小型扁平封装 •PC=1.0〜2.0 W(安装在陶瓷基板上) •互补2SC2873
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