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2SA1213-Y PNP transistors（BJT） -50V -2A 120MHz 120~240 -500mV/-0.5V SOT-89/SC-62 marking NY power amplifier/switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | Silicon PNP Epitaxial Type Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873 |
| 描述与应用 | 硅PNP外延型 功率放大器应用 电源开关应用 •低饱和电压VCE（sat）=-0.5 V（最大值）（IC=-1 A） •高速开关时间：TSTG=1.0微秒（典型值） •小型扁平封装 •PC=1.0〜2.0 W（安装在陶瓷基板上） •互补2SC2873 |
