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2SA1242-Y PNP transistors(BJT) -35V -5A 170MHz 160~320 -1000mV/-1V TO-252/DPAK marking A1242 medium power amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -35V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流IC Collector Current(IC) | -5A |
截止频率fT Transtion Frequency(fT) | 170MHz |
直流电流增益hFE DC Current Gain(hFE) | 160~320 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -1000mV/-1V |
耗散功率Pc PoWer Dissipation | 1W |
Description & Applications | silicon PNP epitaxial type strobe flash application; medium power amplifier application; low collector saturation voltage; high power dissipation |
描述与应用 | 硅PNP外延型 闪光灯的应用; 中等功率放大器应用; 集电极饱和电压低; 高功耗 |