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2SA1252 PNP transistors（BJT） -60V -150mA/-0.15A 100MHz 200~400 -500mV/-0.5V SOT-23/CP marking D6
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −150mA/-0.15A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP/NPN Epitaxial planar silicon transistors For AF applications high Vebo； wide ASO and high durability against breakdown |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 对于AF应用 高VEBO; 宽的ASO和高耐久性反对击穿 |
