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2SA1331 PNP transistors（BJT） -60V -150mA/-0.15A 100MHz 137~270 -100mV/-0.1V SOT-23/CP marking O5 high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −150mA/-0.15A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 137~270 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率Pc PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP/NPN epitaxial planar silicon transistors fast switching speed； high breakdown voltage |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 开关速度快; 击穿电压高 |
