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2SA1365 PNP transistors(BJT) -25V -700mA/-0.7A 180MHz 150~300 -200mV/-0.2V SOT-23/SC-59 marking AE large current drive
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -25V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流IC Collector Current(IC) | -700mA/-0.7A |
截止频率fT Transtion Frequency(fT) | 180MHz |
直流电流增益hFE DC Current Gain(hFE) | 150~300 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −200mV/-0.2V |
耗散功率Pc PoWer Dissipation | 150mW/0.15W |
Description & Applications | for high current drive application silicon PNP epitaxial type high collector current; high gain band width product; excellent linearity of DC forward current gain; low collector to emitter saturation voltage |
描述与应用 | 为高电流驱动应用 硅PNP外延型 高集电极电流; 高增益带宽产品; 卓越的线性度直流正向电流增益; 集电极到发射极饱和电压低 |